byw51(f)-200 ? august 1998 ed: 2c high efficiency fast recovery rectifier diodes to220ab (plastic) byw51-200 suited for smps very low forward losses negligible switching losses high surge current capability high avalanche energy capability insulated version (isowatt220ab) : insulating voltage = 2000 v dc capacitance = 12 pf description absolute maximum ratings features dual center tap rectifier suited for switchmode power supply and high frequency dc to dc con- verters. packaged in to220ab, or isowatt220ab this device is intended for use in low voltage, high fre- quency inverters, free wheeling and polarity pro- tection applications. isolated isowatt220ab (plastic) BYW51F-200 symbol parameter value unit i f(rms) rms forward current per diode 20 a i f(av) average forward current d = 0.5 to220ab tc=120 c per diode 10 a isowatt220ab tc=95 c per diode 10 i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 100 a tstg tj storage and junction temperature range - 65 to + 150 - 65 to + 150 c c symbol parameter value unit v rrm repetitive peak reverse voltage 200 v a1 k a2 a1 k a2 a1 k a2 1/6
symbol test conditions min. typ. max. unit i r *t j =25 cv r =v rrm 15 m a t j = 100 c1ma v f** t j = 125 ci f = 8 a 0.85 v t j = 125 ci f = 16 a 1.05 t j =25 ci f = 16 a 1.15 pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 m s, duty cycle < 2 % to evaluate the conductionlosses use the following equation : p = 0.65 x i f(av) + 0.025 x i f 2 (rms) symbol test conditions min. typ. max. unit trr t j =25 ci f = 0.5a i r =1a irr = 0.25a 25 ns i f =1a v r = 30v di f /dt = -50a/ m s35 tfr t j =25 ci f =1a v fr = 1.1 x v f tr = 10 ns 15 ns v fp t j =25 ci f = 1a tr = 10 ns 2 v symbol parameter value unit rth (j-c) junction to case to220ab per diode 2.5 c/w total 1.4 isowatt220ab per diode 5.1 total 4.05 rth (c) coupling to220ab 0.25 c/w isowatt220ab 3.0 when the diodes 1 and 2 are used simultaneously : tj-tc (diode 1) = p(diode 1) x rth(j-c) (per diode) + p(diode 2) x rth(c) thermal resistance electrical characteristics (per diode) static characteristics recovery characteristics byw51(f)-200 2/6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 150 175 200 t i m =tp/t tp i m(a) p=15w p=5w p=10w fig.2 : peak current versus form factor. 0.1 1 10 100 tj=125 c o ifm(a) vfm(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 fig.3 : forward voltage drop versus forward cur- rent (maximum values). 0.1 1.0 0.2 0.5 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 singl e pulse tp(s) t =tp/t tp 1.0e-03 1.0e-02 1.0e-01 1.0e+00 k fig.4 : relative variation of thermal impedance junction to case versus pulse duration. (to220ab) 01234567891011121314 0 2 4 6 8 10 12 14 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : average forward power dissipation versus average forward current. 0.2 0.4 0.6 0.8 1 =0.5 =0.2 =0.1 single pulse tp(s) zth(j-c) (tp. ) k= rth(j-c) 0 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 k t =tp/t tp fig.5 : relative variation of thermal impedance junction to case versus pulse duration. (isowatt220ab) byw51(f)-200 3/6
0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 im t =0.5 t(s) i m(a) tc=25 c o tc=50 c o tc=95 c o fig.7 : non repetitive surge peak forward current versus overload duration. (isowatt220ab) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig.8 : average current versus ambient tempera- ture. (duty cycle : 0.5) (to220ab) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig.9 : average current versus ambient tempera- ture. (duty cycle : 0.5) (isowatt220ab) c(pf) f=1mhz tj=25 c vr(v) o fig.10 : junction capacitance versus reverse volt- age applied (typical values). 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 im t =0.5 t(s) i m(a) tc=25 c o tc=75 c o tc=120 c o fig.6 : non repetitive surge peak forward current versus overload duration. (to220ab) qrr(nc) if=if(av) dif/dt(a/us) 90% confidence tj=125oc fig.11 : recovery charges versus di f /dt. byw51(f)-200 4/6
qrr;irm[tj]/qrr;irm[tj=125 c tj(oc) ] o fig.13 : dynamic parameters versus junction tem- perature. rm(a) i if=if(av) dif/dt(a/us) tj=125oc 90% confidence fig.12 : peak reverse current versus dif/dt. package mechanical data to220ab (jedec outline) cooling method : c marking : type number weight : 2.23 g recommended torque value : 0.8m.n maximum torque value : 1.0m.n a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151 byw51(f)-200 5/6
cooling method : c marking : type number weight : 2.08 g recommended torque value : 0.55m.n maximum torque value : 0.70m.n package mechanical data isowatt220ab (jedec outline) ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 b 2.50 2.70 0.098 0.106 d 2.50 2.75 0.098 0.108 e 0.40 0.70 0.016 0.028 f 0.75 1.00 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.40 2.70 0.094 0.106 h 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l3 28.60 30.60 1.125 1.205 l4 9.80 10.60 0.386 0.417 l6 15.90 16.40 0.626 0.646 l7 9.00 9.30 0.354 0.366 diam 3.00 3.20 0.118 0.126 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. byw51(f)-200 6/6
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